Alliance Memory Exhibitor Preview at Embedded World 2024

Alliance Memory will showcase its latest LPDDR4x, eMMC, Flash, SDRAM, and lower power SRAM solutions at Embedded World 2024 in Nuremberg, Germany (Hall 3A, Stand 215) from April 9 to 11, 2024.

With low-voltage operation of 0.6V, our new 16Gb AS4C512M32MD4V-046BIN and 32Gb AS4C1G32MD4V-046BIN in the 200-ball FBGA package increase battery life in portable electronics for the consumer, commercial, and industrial markets, including smartphones, smart speakers, security surveillance systems, and other IoT devices utilizing AI and 5G technologies. Providing increased efficiency for advanced audio and ultra-high-resolution video in embedded applications, the LPDDR4X SDRAMs are offered in 32-bit bus width operating at high clock frequencies of 2.133GHz with extremely high data rates of 4.2Gbps. Learn more.

HIGHLIGHTED PRODUCTS
4GB to 128GB eMMC Solutions



We've extended our offering of eMMCs to include densities from 4GB all the way up to 128GB, providing you with a wide range of options to meet your solid-state storage needs in consumer, industrial, and networking applications. The devices integrate MLC NAND (4GB to 16GB) and TLC NAND (32GB to 128GB) flash memory with an eMMC controller and flash transition layer (FTL) management software in a single 11.5 mm by 13 mm 153-ball FBGA package. Learn more.

1.8V, 128Mb Multiple I/O Serial NOR Flash Memory Solutions



Offering enhanced performance — including fast read performance up to 133MHz; fast program and erase times down to 0.3ms and 60ms typical, respectively; and active read current as low as 5mA — and operating over a single 1.65V to 1.95V power supply, our new AS25F series 1.8V, 128Mb multiple input/output serial NOR flash memory products are designed to meet the demands of the computer, consumer, communications, IoT, and mobile markets. Learn more.

1.8V and 3V SPI NAND Flash Memory Solutions



With densities from 1Gb to 8Gb and high-speed clock frequencies up to 120MHz, our AS5F series of 1.8V and 3V devices meet the growing demand for SPI NAND flash memory products in the automotive, industrial, communications, and consumer electronics markets. Learn more.

New 16Gb DDR4 SDRAM



We've expanded its portfolio of CMOS DDR4 SDRAMs with a new 16Gb device in the 96-ball FBGA package. The new AS4C1G16D4-062BCN delivers improved performance over previous-generation DDR3 SDRAMs, with lower power consumption and higher speeds and transfer rates. Read more.

New LPSRAMs



New low power asynchronous 1Mb and 4Mb SRAM (LPSRAM) products with feature embedded error-correction code (ECC). Compared to previous-generation devices, the new AS6CE1016A (1Mb) and AS6CE4016B (4Mb) offer better failure in time (FIT) and mean time to failure (MTTF) characteristics with reduced soft error rates (SER). Read more.

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